| abstract |
Provided is a film forming method capable of forming a silicon nitride film having good film quality and high film forming rate such as high insulation and low etching rate while suppressing generation of particles. . A thin film made of a silicon nitride film on the surface of a target object by supplying a silane-based gas and a nitriding gas into a processing container 4 in which a plurality of target objects W are accommodated and can be evacuated. In the film forming method for forming a film, a silane-based gas supplying step for supplying a silane-based gas and a nitriding gas supplying step for supplying a nitriding gas are alternately repeated, and a plurality of repeated nitriding steps are performed. The gas supply process includes a nitriding gas supplying process for generating plasma and a nitriding gas supplying process for generating no plasma. As a result, a silicon nitride film having a high insulating property, a low etching rate, and a high film formation rate is formed while suppressing the generation of particles. [Selection] Figure 3 |