| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ed62b7551998e54b35784cdbbb2778d5 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45544
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45531
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45542
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-308 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-42 |
| filingDate |
2014-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_11276cd7b630770ff1eab498eaf58569
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_493254ad6a978e23f37dfb872b1bbee8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3cd060bc4a3d9ce9aba67e94c46a132b |
| publicationDate |
2015-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2015170614-A |
| titleOfInvention |
Semiconductor device manufacturing method, substrate processing apparatus, program, and recording medium |
| abstract |
PROBLEM TO BE SOLVED: To form a film having a high carbon concentration. A first layer containing a first element and carbon is supplied to a substrate in a processing chamber by supplying a source gas having a chemical bond between the first element and carbon from a first supply unit. And a reaction gas containing the second element is supplied from the second supply unit to the substrate in the processing chamber, and plasma excitation is performed from a third supply unit different from the second supply unit. By supplying an inert gas, a step of modifying the first layer and forming the second layer non-simultaneously is performed a predetermined number of times, whereby the first element, A film containing the second element and carbon is formed. [Selection] Figure 4 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017139256-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11776807-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2021184478-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11562900-B2 |
| priorityDate |
2014-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |