http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102317181-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76856 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45536 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02219 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-045 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-321 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate | 2021-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102317181-B1 |
| titleOfInvention | Method of forming a SiN thin film |
| abstract | Precursors and methods for forming silicon nitride films are provided. In some embodiments, silicon nitride may be deposited by atomic layer deposition (ALD), such as plasma enhanced ALD. In some embodiments, the deposited silicon nitride may be treated by plasma treatment. The plasma treatment may be a nitrogen plasma treatment. In some embodiments, silicon precursors for depositing silicon nitride include an iodine ligand. When the silicon nitride films are deposited on three-dimensional structures such as FinFETs or other types of multi-gate FETs, both vertical and horizontal portions may have relatively uniform etch rates. In some embodiments, the various silicon nitride films of the present disclosure have an etch rate of less than half the removal rate of thermal oxide with diluted HF (0.5%). In some embodiments, a method for depositing silicon nitride films includes a multi-step plasma treatment. |
| priorityDate | 2014-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 64.