| abstract |
A cleaning composition that can suppress corrosion of tungsten on a semiconductor substrate and has excellent removability of plasma etching residue and / or ashing residue on the semiconductor substrate, and manufacture of a semiconductor device using the cleaning composition A method and a cleaning method are provided. (Component a) Water, (Component b) Sugar, (Component c) Hydroxylamine and / or salt thereof, (Component d) Quaternary ammonium compound, and (Component e) Organic acid, A cleaning composition for cleaning a semiconductor substrate, wherein the pH is 6-9. A cleaning method using the cleaning composition, and a method for manufacturing a semiconductor device. [Selection] Figure 2 |