| abstract |
(57) Abstract: The present invention has excellent depot cleaning properties and can be used in common for at least either tungsten or a tungsten alloy wiring or an electrode and aluminum or an aluminum alloy wiring. Provided are a low-temperature cleaning method for a semiconductor substrate which is also excellent in an effect of preventing corrosion of various members such as a metal thin film, and a method for cleaning a semiconductor substrate which can reduce a space for installing a cleaning apparatus and a space for storing a cleaning liquid. (A) a n-th stage acid dissociation exponent pKa n of n-valent basic acid (25 ° C.) is 3 to 11 in which acid and / Or a salt thereof, (b) water, and (c) a detergent composition containing a chelating agent containing a nitrogen atom in a molecule and having a pH of 6 to 11 and at least (A) Tungsten or tungsten alloy wiring or electrode and (B) A method for cleaning a semiconductor substrate, comprising cleaning a semiconductor substrate provided with aluminum or aluminum alloy wiring at 15 to 60 ° C. |