| abstract |
A cleaning composition that can suppress corrosion of tungsten on a semiconductor substrate and has excellent removability of plasma etching residue and / or ashing residue on the semiconductor substrate, and manufacture of a semiconductor device using the cleaning composition A method and a cleaning method are provided. (Component a) Water, (Component b) Amine compound, (Component c) Hydroxylamine and / or salt thereof, (Component d) Quaternary ammonium compound, (Component e) Organic acid, and (Component) f) A cleaning composition for removing plasma etching residues and / or ashing residues formed on a semiconductor substrate, wherein the cleaning composition comprises a water-soluble organic solvent and has a pH of 6 to 9, and the cleaning composition Manufacturing method and cleaning method of semiconductor device using object. [Selection] Figure 2 |