| abstract |
Provided is a light-emitting element having a reflection structure that has excellent weather resistance, higher reflection ability, and can be made into a thin film. A semiconductor structure having a light-emitting layer, a light extraction surface provided on one main surface side of the semiconductor structure, and a main surface opposite to the light extraction surface are provided. A light emitting element having an electrode 3 electrically connected to the structure 11, wherein a reflective structure 20 is formed between the semiconductor structure 11 and the electrode 3, and the reflective structure 20 is formed on the semiconductor structure 11. The reflective layer 16 to be formed and the dielectric multilayer film 4 formed of a plurality of dielectrics on the reflective layer 16 are included. The refractive index of the reflective layer 16 is the refractive index of the semiconductor structure 11. And the center wavelength of the reflection spectrum of the reflection structure 20 is longer than the emission peak wavelength from the light emitting layer 8. [Selection] Figure 2 |