http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102237158-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0066 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12041 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-62 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-48 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-62 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-10 |
| filingDate | 2017-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102237158-B1 |
| titleOfInvention | Semiconductor device and semiconductor device package |
| abstract | The semiconductor device according to the embodiment includes a light emitting structure, a first electrode electrically connected to the first conductivity type semiconductor layer of the light emitting structure, a second electrode electrically connected to the second conductivity type semiconductor layer of the light emitting structure, and the first electrode. A first bonding pad connected to each other, a second bonding pad electrically connected to the second electrode, and a third reflective layer disposed between the first bonding pad and the second bonding pad may be included. According to an embodiment, when viewed from the top of the semiconductor device, the sum of the area of the first bonding pad and the area of the second bonding pad is the total area of the top surface of the semiconductor device on which the first bonding pad and the second bonding pad are disposed. Is equal to or smaller than 60% of, and the area of the third reflective layer is 10% or more and 25% or less of the total area of the upper surface of the semiconductor device, and the first area provided between the first bonding pad and the second bonding pad The light generated from the light emitting structure is not transmitted through the light emitting structure and is not emitted, and the second area provided between the adjacent first bonding pad or the second bonding pad and the side disposed in the long axis direction of the semiconductor element, and disposed in the short axis direction of the semiconductor element Light generated from the light emitting structure may be transmitted through and emitted in a third area provided between the side surface and the adjacent first bonding pad or the second bonding pad. |
| priorityDate | 2017-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.