http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180102764-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fa80eed27901ac84139c7a7109c21e17 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12041 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0066 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-62 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-62 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-48 |
| filingDate | 2017-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_340d4eb2d21570aed8c5ee63658561ee http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1dfe45567fef19554df337cf5c228d0a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_db5b733d8dcd8335e523269f6a01198c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_85592090ca99201e4fa9246587b853a3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2f5054f07e261b6e0d7e0646357f1c9a |
| publicationDate | 2018-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20180102764-A |
| titleOfInvention | Semiconductor device and semiconductor device package |
| abstract | A semiconductor device according to an embodiment includes a light emitting structure, a first electrode electrically connected to the first conductive semiconductor layer of the light emitting structure, a second electrode electrically connected to the second conductive semiconductor layer of the light emitting structure, A second bonding pad electrically connected to the second electrode, and a third reflective layer disposed between the first bonding pad and the second bonding pad. According to the embodiment, the sum of the area of the first bonding pad and the area of the second bonding pad, when viewed from the upper direction of the semiconductor element, is larger than the total area of the upper surface of the semiconductor element in which the first bonding pad and the second bonding pad are disposed The area of the third reflective layer is not less than 10% and not more than 25% of the total area of the upper surface of the semiconductor element, and the first area provided between the first bonding pad and the second bonding pad is equal to or smaller than 60% A second region provided between the side surface of the semiconductor element in the major axis direction and the neighboring first bonding pad or the second bonding pad and the second region provided in the minor axis direction of the semiconductor element Light generated in the light emitting structure can be transmitted and emitted in a third region provided between the first side surface and the neighboring first bonding pad or the second bonding pad. |
| priorityDate | 2017-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.