http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180102763-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fa80eed27901ac84139c7a7109c21e17 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0066 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12041 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-62 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-62 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-36 |
| filingDate | 2017-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1dfe45567fef19554df337cf5c228d0a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_85592090ca99201e4fa9246587b853a3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_340d4eb2d21570aed8c5ee63658561ee |
| publicationDate | 2018-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20180102763-A |
| titleOfInvention | Semiconductor device and semiconductor device package |
| abstract | The embodiment relates to a semiconductor element and a method of manufacturing a semiconductor element, and a semiconductor element package. The semiconductor device according to the embodiment may include a light emitting structure, a first electrode, a second electrode, a first insulating reflective layer, a second insulating reflective layer, a first bonding pad, and a second bonding pad. According to an embodiment, the light emitting structure may include a first conductivity type semiconductor layer and a second conductivity type semiconductor layer. The first electrode may be disposed on the first conductive type semiconductor layer and may be electrically connected to the first conductive type semiconductor layer. The second electrode is disposed on the second conductive type semiconductor layer and may be electrically connected to the second conductive type semiconductor layer. The first insulating reflective layer may be disposed on the first electrode and the second electrode, and may include a first opening exposing an upper surface of the first electrode. The second insulating reflective layer may include a first electrode and a second opening disposed apart from the first insulating reflection layer on the second electrode and exposing an upper surface of the second electrode. The first bonding pad is disposed on the first insulating reflection layer and may be electrically connected to the first electrode through the first opening. The second bonding pad may be disposed apart from the first bonding pad on the second insulating reflection layer, and may be electrically connected to the second electrode through the second opening. According to the embodiment, the sum of the area of the first bonding pad and the area of the second bonding pad, when viewed from the upper direction of the semiconductor element, is larger than the total area of the upper surface of the semiconductor element in which the first bonding pad and the second bonding pad are disposed May be provided equal to or less than 70% |
| priorityDate | 2017-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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