| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fd221d21998567268ab28734915df324 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-44 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-10 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01D5-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-54
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G06K7-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B41J2-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-62
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-60 |
| filingDate |
1992-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_06ffd8ea0bc16e41ec017433c7e85c6a |
| publicationDate |
1994-02-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H0645649-A |
| titleOfInvention |
A semiconductor light emitting element, and an optical detection device, an optical information processing device, and a light emitting device using the light emitting element. |
| abstract |
(57) [Abstract] [PROBLEMS] To provide a semiconductor light emitting device having a small light emitting diameter and having high light emitting efficiency. [Structure] A multilayer reflective film layer 3 is provided on a semiconductor substrate 1 having a depression 2 formed on its upper surface. The multilayer reflective film layer 3 is formed along the depression 2 and has a concave portion 4. An n-type lower clad layer 5, an active layer 6, a p-type upper clad layer 7, a p-type diffusion stop layer 8, an n-type current blocking layer 9 and a p-type cap layer 10 are grown on this. Then, the p-type impurity is diffused from the cap layer 10 to the upper cladding layer to form the current confinement region 11 at the position corresponding to the recess 2. A light emitting window 13 is opened in the p-side electrode 12 provided on the cap layer so as to correspond to the current constriction region 11. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9728676-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009164423-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10243121-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8764224-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10957830-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10186644-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10658546-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012511252-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8680556-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11588083-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8686429-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10797201-B2 |
| priorityDate |
1992-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |