| abstract |
PROBLEM TO BE SOLVED: To provide a low dielectric constant film having a small dielectric constant, excellent resistance to chemicals such as acids and alkalis, and excellent moisture resistance, and a silicon-based composition for forming such a low dielectric constant film. Another object of the present invention is to provide a semiconductor integrated circuit having a high response speed of a device using such a low dielectric constant film, and a method for manufacturing such a low dielectric constant film. SOLUTION: A siloxane resin and -X- bond [X is (C) m (m = 1 to 3) or a substituent having 9 or less carbon atoms in a main chain in one molecule. Aromatic group], the number ratio of carbon atoms to silicon atoms is 2 / A low dielectric constant film is formed by heat-treating a composition containing a solvent and a silicon compound substantially consisting of silicon, carbon, and hydrogen. |