| abstract |
[PROBLEMS] To provide a material useful for forming a highly reliable insulating film having a low dielectric constant in a semiconductor device having a multilayer wiring structure. SOLUTION: A silazane-type polymer containing a repeating unit represented by the following formula (I): (Wherein, R 1 , R 2 and R 3 represent hydrogen, an alkyl group, an alkenyl group, a cycloalkyl group or an aryl group, provided that At least one is a hydrogen atom and n is a positive integer), and a silicon compound of formula (II): (Wherein, R 1 , R 2 , R 3 and R 4 represent hydrogen, an alkoxy group, a hydroxyl group or a heterocyclic hydrocarbon group, provided that at least 1 to 3 are heterocyclic hydrocarbon groups ). |