| abstract |
A method of processing a porous insulating film and a method of manufacturing a semiconductor device using the same are provided. The method for processing a porous insulating film according to an embodiment of the present invention is to prepare a substrate on which a porous insulating film having an opening is formed, the porous insulating film includes a plurality of pores exposed by the opening, and a first precursor on the substrate forming a first sub-sealing film sealing the exposed pores by supplying , Each of the first and second precursors includes silicon, and the second precursor has a molecular weight smaller than that of the first precursor. |