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filingDate 1998-12-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2000-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2000191822-A
titleOfInvention Porous polymer thin film and semiconductor device
abstract (57) [Abstract] [Problem] High insulation, high heat resistance, low dielectric constant, high adhesion, To provide a polymer thin film that can simultaneously satisfy all of the required characteristics of an insulating film such as a simple manufacturing process, uniform film quality, and stability. SOLUTION: In a porous polymer thin film, 5,0 It is formed from a thin film-forming polymer having a weight average molecular weight of not less than 00 and having no hydrophilic group in its structure, and has a pore diameter of 5 to 5,000 ° in the polymer thin film. Micropores are dispersed, and the pores can be uniformly mixed with the thin film-forming polymer at a molecular level and separated and removed from the thin film during the formation of the polymer thin film. It is configured to be derived from the pore-forming compound.
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