| abstract |
(57) Abstract: In a conventional semiconductor having a plurality of wiring structures arranged on a substrate surface, a leak current occurs and insulation between adjacent wiring structures is impaired. There are disadvantages such as poor adhesion or cracks at the interface, and voids in the space between adjacent wiring structures due to gas from the organic resin film or the like in the wiring structure. The present invention provides a semiconductor device which solves these problems and a method for manufacturing the same. SOLUTION: An inorganic insulating film 109 is formed on a side wall portion of a facing surface of an adjacent wiring structure on a substrate. This inorganic insulating film blocks a leak current generated in each wiring structure, holds a plurality of films 102 to 106 in the wiring structure from the side surface, thereby preventing cracks or the like from occurring, and furthermore, the organic resin films 103, 10 5 to block the formation of voids in the space between adjacent wiring structures. |