| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdad00677b9268c26e005a9e03a7b9dd |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76888
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76801
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53295
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76855 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2002-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3415b92bef9d2a9ceaaff58aa27eaaa1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_039e0e6f190190a64e41e1741f6586cf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_df83f4aeeeeb02cc4723552a4a64f692 |
| publicationDate |
2003-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-1324383-A2 |
| titleOfInvention |
Semiconductor device and method for manufacturing the same |
| abstract |
A semiconductor device comprises a semiconductornsubstrate (24) on which an element (39) is formed and anplug (19a) and a wiring layer (19b) buried in the lowndielectric constant insulation film (14) formed overnthe semiconductor substrate and having a relativendielectric constant of 3 or lower. A high Young'snmodulus insulation film (16) having a Young's modulusnof 15 GPa or higher is formed in contact with the sidenof the plug between the low dielectric constantninsulation film and the plug. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2007099428-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8138082-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1703553-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8399772-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2006130250-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2015130549-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2440881-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9343357-B2 |
| priorityDate |
2001-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |