Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_64c09239dcc1138644f863b39c098648 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4d25d465091318dd782318d538882e58 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4b9909875ba985557e5e7f6123e54705 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_641c3dc4cfb7e5eabefb1f81cf202265 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1047 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7682 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 |
filingDate |
2010-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2012-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6d89d6b7f1b5c4a14627a131b22a6a97 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_46acfb99a342ea59c15845fe11908d00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5a29069815634e695756cd5f051eb868 |
publicationDate |
2012-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-8212338-B2 |
titleOfInvention |
Manufacturing method of semiconductor device and semiconductor device produced therewith |
abstract |
A semiconductor device (having an interlayer insulating film) which is sufficiently low in the dielectric constant and high in the mechanical strength is provided. n A manufacturing method of a semiconductor device includes: a step of forming a dielectric thin film in which a plurality of pores are arranged around a skeleton mainly made of a Si—O bond, on a surface of a semiconductor substrate on which a desired element region is formed; a step of applying patterning on a surface of the dielectric thin film through a mask; and a step of bringing a gas containing at least one kind of tetramethylcyclotetrasiloxane (TMCTS), hexamethyldisilazane (HMDS) and trimethylchlorosilane (TMCS) molecules into contact with the patterned surface of the dielectric thin film. |
priorityDate |
2004-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |