| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7ef01e33058cf740cf2197991be97af1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7d88770c8d07dcafd88633adb9f84a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4b9909875ba985557e5e7f6123e54705
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dc3e639586089fe232d0cfb27383c875
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_641c3dc4cfb7e5eabefb1f81cf202265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f187eb8cb31e70d4acd428dd8beedd4f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1047 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7682
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2855
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32051 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 |
| filingDate |
2005-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7aa4a87da315a2f6ba5f3cc039868388
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_80806e939e412763b0416c12c6d4a782
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8d5a0a9f81d4522677f2b79bffa7a82e |
| publicationDate |
2006-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2006025500-A1 |
| titleOfInvention |
Method for manufacturing semiconductor device and semiconductor device manufactured by such method |
| abstract |
Disclosed is a semiconductor device having a highly reliable wiring structure wherein adhesion between a dielectric thin film and a conductor layer is improved. Specifically disclosed is a method for manufacturing a semiconductor device comprising a step wherein a reactive plasma is supplied to the surface of a dielectric thin film wherein many pores are arranged around the skeleton mainly containing Si-O bonds for pretreating the surface, and a step for forming a conductive film on the thus-pretreated dielectric thin film surface by sputtering. This method is characterized by having a step for bringing a gas containing at least one of tetramethylcyclotetrasiloxane (TMCTS), hexamethylsilazane (HMDS), and trimethylchlorosilane (TMCS) molecules into contact with the dielectric thin film surface before the pretreatment step. |
| priorityDate |
2004-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |