| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f56b5174f7d196258707ccf1d609796e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5ee5900241a46b63642b9aaaa1463fca
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c434d18ad210fb2624bdc806e862acea
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4538625612b3814a4a0f0bb6f17eddfe
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_abd0e1a7fe6175a580ea5976bcb918f8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_97f0cd41de634508b3ca9171d0010673
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c2026b1ac0c0b8e2e557b59b3e85a7ac |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76835
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5329
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53295 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-4763 |
| filingDate |
2010-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f2cd76e22209752a39a77be0b25f27c0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5a7b310327626a46135a50767dd1cb4b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a918ff4583b95a030807a1272c1c259c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_111a71fcbfa07ce02a5565b1fbadce3d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ccff20234004fef97a18243b0fcb51b5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_33acda25b1427961f6ecaa21fa39c503 |
| publicationDate |
2013-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8592303-B2 |
| titleOfInvention |
Wiring structure and method for manufacturing the same |
| abstract |
There are provided with a wiring structure and a method for manufacturing the same wherein in a wiring structure of multi-layered wiring in which a metal wiring is formed on a substrate forming a semiconductor element thereby obtaining connection of the element, no damage to insulation property between the abutting wirings by occurrence of leakage current and no deterioration of insulation resistance property between the abutting wirings are achieved in case that fine metal wiring is formed in a porous insulation film. The insulation barrier layer 413 is formed between an interlayer insulation film and the metal wiring, in the metal wiring structure on the substrate forming the semiconductor element. The insulation barrier layer enables to reduce leakage current between the abutting wirings and to elevate the insulation credibility. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9190323-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013187273-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10388563-B2 |
| priorityDate |
2003-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |