http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0825642-A2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0276 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 1997-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5b62fc9dadf1146fd64fecea119a37bd |
| publicationDate | 1998-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-0825642-A2 |
| titleOfInvention | Plasma process for high photoresist selectivity and improved polymer adhesion |
| abstract | A plasma etch process for etching a workpiece in anprocessing chamber of a plasma reactor which producesnimproved photoresist layer etch uniformity andnselectivity, reduced faceting of the photoresist, reducednpolymer peeling, and reduced etching of exposed barriernlayer surfaces. This improvement is obtained bynmodifying certain process parameters in a way atypical ofncurrent etch processes. Specifically, the chambernpressure and/or flow rate of fluorine-containingncomponents of the etchant gas are increased. Innaddition, a decrease in the source power used to maintainnthe plasma or an increase in the roof temperature of thenchamber will also contribute to the improvement. Tonprevent the occurrence of significant etch stopping, andiluent is added to the etchant gas to limit thenformation of polymer. The addition of a diluent worksnwell up to a point, after which the combined effect ofnmodifying the aforementioned process parameters causesnetch stopping regardless of the amount of diluent gasnflowing through the chamber. Therefore, values chosennfor the four process parameters are coordinated tonoptimize the benefits of the present invention, whilenminimizing etch stopping. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100505602-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1096547-A2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1096547-A3 |
| priorityDate | 1996-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 39.