http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0714835-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d6402b23ab8782152be47b3996e48a4a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
| filingDate | 1993-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cc65e17ebf6cbe92d268f53f4f08c0a3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_66ba5f44bd70d834e1985b3c722f132b |
| publicationDate | 1995-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H0714835-A |
| titleOfInvention | Method for forming multilayer wiring structure |
| abstract | (57) [Abstract] [Purpose] It is intended to improve the wiring density without affecting the underlying substrate or the like even when the misalignment of the through hole occurs. [Structure] First, a lower layer Al wiring 5 is patterned on a boron phosphorus glass 4 formed on a substrate 1. next, On top of this, this lower layer Al wiring 4 and boron phosphorus glass 4 A silicon nitride film 6 that is corroded by an etchant different from that is formed. Next, a plasma oxide film 7 film which is corroded by an etchant different from the silicon nitride film 6 is formed on the silicon nitride film 6. Next, after forming the resist film 8, a through hole pattern 9 is formed using CHF 3 gas. Next, through-hole pattern 9 The silicon nitride film 6 exposed at the bottom of the is removed by using a CF 4 +0 2 based gas. Thereafter, the upper wiring layer 10 is deposited on this upper layer portion. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0825642-A3 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0825642-A2 |
| priorityDate | 1993-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID3084099 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419522015 |
Total number of triples: 20.