http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1096547-A2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-321 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32935 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81C1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2000-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d73fddeb26fc0eb13bbd594190fec5ec http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_75db9c3c91fa6f255912f9b040ed1940 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d14fee89ab158127f8bfed00e4da2fa4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2dec0ce998c961527fb29d59ab29422b |
| publicationDate | 2001-05-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-1096547-A2 |
| titleOfInvention | Method and apparatus for plasma etching |
| abstract | This invention is directed to a method for plasma etching difficult to etch materials atna high etch rate. The method is particularly useful in plasma etching silicon nitride layersnmore than five microns thick. The method includes a plasma formed by energy providednfrom two separate power sources and a gaseous mixture that includes only an etchant gasnand a sputtering gas. The power levels from the separate power sources and the ratio betweennthe flow rates of the etchant gas and a sputtering gas can be advantageously adjustednto obtain etch rates of silicon nitride greater than two microns per minute. Additionally, annembodiment of the method of the invention provides a two etch step process which combinesna high etch rate process with a low etch rate process to achieve high throughput whilenminimizing the likelihood of damage to underlying layers. The first etch step of the two-stepnmethod provides a high etch rate of about two microns per minute to remove substantiallynall of a layer to be etched the. In the second step, a low etch rate process having an etch ratenbelow about two microns per minute is used remove any residual material not removed bynthe first etch step. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108225593-A |
| priorityDate | 1999-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.