http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100505602-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32055 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate | 1998-05-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2005-09-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ae4ae80f45c9a0a4d18fe76c664c26b5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1289ec5884c884b79678042924096e4d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_18133c66be40f60f18c7a54f44bdc79a |
| publicationDate | 2005-09-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100505602-B1 |
| titleOfInvention | Method for removing anti-reflection film and multi-layer in cluding that used in manufacturing semi-conductor devices |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an etching method during a semiconductor device manufacturing process, and more particularly to an inorganic antireflection film and a front surface etching method of a multilayer film including the same. The present invention is to deposit a polycrystalline silicon used as a plug in the contact hole and the inorganic antireflection film formed by a photolithography process using an inorganic antireflection film, and using a carbon tetrafluoride (CF4) and oxygen (O2) gas composition and a polycrystalline silicon layer It is characterized in that the anti-reflection film at the same time the entire surface. At this time, the flow rate ratio of oxygen to carbon tetrafluoride is preferably 20 to 80%.n n n According to the present invention, the inorganic antireflection film which adversely affects the subsequent process can be easily removed, and the lower layer insulating film can be etched at the same time, which is effective in reducing the thickness and planarization of the entire insulating film. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100712473-B1 |
| priorityDate | 1998-05-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.