http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H07321090-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e722311c5a30f83cf91146b47bd21f0b
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J27-1853
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07C57-03
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07C51-377
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07C51-377
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01J27-185
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07C57-03
filingDate 1992-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6492e02deca942e838e681035e236195
publicationDate 1995-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H07321090-A
titleOfInvention Post-etching method
abstract (57) [Summary] [Objective] The polymer adhering to the surface of the material is removed by an etching treatment to shorten the processing time of the next step and improve the reproducibility of etching. A low-pressure atmosphere is set in a processing container into which a semiconductor wafer W having a SiO2 film 31 and a photoresist layer 32 is formed, an etching gas mixed with CF4 + CHF3 + Ar is supplied, and plasma is applied to the SiO2 of the semiconductor wafer W. The film 31 and the photoresist layer 32 are etched. After the etching process, a post-process is performed using a process gas mixed with CF4 + Ar. As a result, the polymer 34 formed on the surface of the semiconductor wafer W by the etching process can be removed.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015170763-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0825642-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0825642-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20140124334-A
priorityDate 1969-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559562
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6373
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419546198
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID14917

Total number of triples: 27.