| abstract |
A photoresist composition that realizes low line edge roughness, excelling in resist pattern profile configuration and that is used in the process for resist pattern formation including the step of immersion lithography. This photoresist composition comprises resin component (A), acid generator component (B), organic solvent (C) and nitrogenous organic compound (D) of the general formula: (1) wherein each of X, Y and Z independently represents an alkyl group having or not having an aromatic ring bonded to an end thereof (provided that two ends of the X, Y and Z may be bonded with each other to thereby form a cyclic structure); at least one of the X, Y and Z contains a polar group; and the molecular weight of the compound (D) is 200 or greater. |