| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_268be9afa00cf55b5aa72b1612151ecb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f3715fe9b7e727374008f9b34cd9e98c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b0c063b2b3132008d1c1a19bf12aebb9 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0758
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2024
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0035
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-325
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-322 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-30 |
| filingDate |
2008-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c053c57d9b24577389384420e91a738f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_238fafb862f48781e73d47020b5fb1a3 |
| publicationDate |
2013-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8530148-B2 |
| titleOfInvention |
Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method |
| abstract |
A pattern forming method, including: (A) coating a substrate with a positive resist composition of which solubility in a positive developer increases and solubility in a negative developer decreases upon irradiation with actinic rays or radiation, so as to form a resist film; (B) exposing the resist film; and (D) developing the resist film with a negative developer; a positive resist composition for multiple development used in the method; a developer for use in the method; and a rinsing solution for negative development used in the method. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8993222-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8932803-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9366958-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9201304-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9465298-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017285482-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9052603-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8815493-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013230803-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9291904-B2 |
| priorityDate |
2006-12-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |