| abstract |
(57) Abstract A photoresist for microlithography with extreme ultraviolet, far ultraviolet, and near ultraviolet and related methods are disclosed. In some embodiments, the photoresist comprises (a) at least one ethylenically unsaturated compound is polycyclic and at least one ethylenically unsaturated compound has at least one ethylenically unsaturated carbon atom covalently bonded to an ethylenically unsaturated carbon atom. A fluorine-containing copolymer comprising recurring units derived from at least one ethylenically unsaturated compound characterized by containing at least one fluorine atom; and (b) at least one photoactive component. In another embodiment, the photoresist is derived from at least one polycyclic ethylenically unsaturated compound having at least one atom or group selected from the group consisting of a fluorine atom, a perfluoroalkyl group, and a perfluoroalkoxy group. A fluorine-containing copolymer comprising at least one atom or group, wherein at least one atom or group is contained in a ring structure and at least one covalently bonded carbon atom forms each of the ethylenically unsaturated compounds. Copolymers characterized by being covalently bonded to a carbon atom remote from the ethylenically unsaturated carbon atom. The photoresist has high transparency in extreme / far UV as well as near UV, high resistance to plasma etching, and is useful for microlithography in the extreme ultraviolet, far ultraviolet, near ultraviolet (UV) region, particularly at a wavelength of 365 nm or less. Novel fluorine-containing copolymers are also disclosed. |