| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b90dcf297ae970702d39cacd710f9866
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_707c1faf595c497e9c557f7fbbdf8a0c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_db95aa334ec8f819ea8c95268d3f7ee8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_85da8241e3272ed7f8bbe74222dd809f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e15e80d3df3ef754dbab9fa4d3882f81
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_00309958aff0b6c6a02c1621a154375e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D5-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76864
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D21-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76856
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76862 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D7-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D5-34 |
| filingDate |
2008-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b0cd176c73a77f2866a1182d1842e17b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_048a062a7cf7eb68c9b9c82a1d7a2521
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cedf37e2ca0db5477c5af670cab20112
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4bc1247526608f1e93413c54cc05e6cd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_73cf78f24bc86cca6186d89a800f54e9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_66b4cf97f13e7321bc83b8be4c17b4c2 |
| publicationDate |
2014-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8764961-B2 |
| titleOfInvention |
Cu surface plasma treatment to improve gapfill window |
| abstract |
A method and apparatus for selectively controlling deposition rate of conductive material during an electroplating process. Dopants are predominantly incorporated into a conductive seed layer on field regions of a substrate prior to filling openings in the field regions by electroplating. A substrate is positioned in one or more processing chambers, and barrier and conductive seed layers formed. A dopant precursor is provided to the chamber and ionized, with or without voltage bias. The dopant predominantly incorporates into the conductive seed layer on the field regions. Electrical conductivity of the conductive seed layer on the field regions is reduced relative to that of the conductive seed layer in the openings, resulting in low initial deposition rate of metal on the field regions during electroplating, and little or no void formation in the metal deposited in the openings. |
| priorityDate |
2008-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |