| abstract |
A magnetron sputter reactor ( 410 ) and its method of use, in which SIP sputtering and ICP sputtering are promoted is disclosed. In another chamber ( 412 ) an array of auxiliary magnets positioned along sidewalls ( 414 ) of a magnetron sputter reactor on a side towards the wafer from the target is disclosed. The magnetron ( 436 ) preferably is a small one having a stronger outer pole ( 442 ) of a first polarity surrounding a weaker inner pole ( 440 ) of a second polarity all on a yoke ( 444 ) and rotates about the axis ( 438 ) of the chamber using rotation means ( 446, 448, 450 ). The auxiliary magnets ( 462 ) preferably have the first polarity to draw the unbalanced magnetic field ( 460 ) towards the wafer ( 424 ), which is on a pedestal ( 422 ) supplied with power ( 454 ). Argon ( 426 ) is supplied through a valve ( 428 ). The target ( 416 ) is supplied with power ( 434 ). |