| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38a06170e4bcab8f1bb2eba1584c569a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fd8317526535265948196ba60856c843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cfccd7bff8c839ebb2254f67d9bf95bf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_730848fc69ca7afca2b3c3e10b6cfd92 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-24802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-107
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-106 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-032
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-40 |
| filingDate |
2007-10-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2012-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_708d5ffabbd18cdd14661c7ca92785e2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1c84a070af4aae4aa46f72133d417745
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cf32118877b9f754793e62c14b3348e4 |
| publicationDate |
2012-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8101333-B2 |
| titleOfInvention |
Method for formation of miniaturized pattern and resist substrate treatment solution for use in the method |
| abstract |
The present invention provides a method for miniaturizing a pattern without seriously increasing the production cost or impairing the production efficiency. This invention also provides a fine resist pattern and a resist substrate-treating solution used for forming the fine pattern. The pattern formation method comprises a treatment step. In the treatment step, a resist pattern after development is treated with a resist substrate-treating solution containing an amino group-containing, preferably, a tertiary polyamine-containing water-soluble polymer, so as to reduce the effective size of the resist pattern formed by the development. The present invention also relates to a resist pattern formed by that method, and further relates to a treating solution used in the method. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10429740-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016139512-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011165523-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016124313-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10012902-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9632415-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016011508-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9298094-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9360760-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9411232-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9618850-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9696625-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9448485-B2 |
| priorityDate |
2006-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |