| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B99-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-023
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8828
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-066
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-231
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-305
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45523 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00 |
| filingDate |
2007-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2010-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_250d854364d2cc890d43e1b1cf5f5f70
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ecfb0135ea948d0f3faf52e1eb7fa161
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6d27a29dc41e83a7e65aa10674931213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8db1e677a6b3847c17c1ccbd28e34ceb |
| publicationDate |
2010-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7807497-B2 |
| titleOfInvention |
Phase-change material layers, methods of forming the same, phase-change memory devices having the same, and methods of forming phase-change memory devices |
| abstract |
Example embodiments may provide phase-change material layers and a method of forming a phase-change material layer and devices using the same by generating a plasma including helium and/or argon in a reaction chamber, forming a first material layer on the object by introducing a first source gas including a first material, forming a first composite material layer on the object by introducing a second source gas including a second material into the reaction chamber, forming a third material layer on the first composite material layer by introducing a third source gas including a third material, and forming a second composite material layer on the first composite material layer by introducing a fourth source gas including a fourth material. Example embodiment phase-change material layers including carbon may be more easily and/or quickly formed at lower temperatures under the helium/argon plasma environment by providing the source gases for various feeding times. Example embodiments may also include memory devices using phase-change memory layers. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010267195-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10937961-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9269900-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8765519-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8697486-B2 |
| priorityDate |
2006-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |