http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100437458-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-231 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-826 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8413 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8828 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B69-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-685 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-68 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-24 |
| filingDate | 2002-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2004-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2004-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100437458-B1 |
| titleOfInvention | Phase change memory cells and methods of fabricating the same |
| abstract | Phase change memory cells and methods of manufacturing the same are provided. The phase change memory cell penetrates the data storage element comprising a first barrier layer pattern and a phase change material layer pattern sequentially stacked, an upper interlayer insulating layer covering the phase change material layer pattern, and a predetermined region of the upper interlayer insulating layer. A plate electrode contact hole exposing a predetermined region of the change material film pattern is provided. The phase change material layer pattern exposed by the plate electrode contact hole contacts the second barrier layer pattern. Accordingly, the aspect ratio of the plate electrode contact hole can be significantly reduced by reducing the thickness of the upper interlayer insulating film. As a result, even if the contact area between the phase change material layer pattern and the second barrier layer pattern is reduced, the second barrier layer pattern in the plate electrode contact hole may be formed without voids or gaps. . Accordingly, a reliable and low power phase change memory cell can be implemented. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7589013-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7807497-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100612913-B1 |
| priorityDate | 2002-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 48.