| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-841 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-1683
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8828
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-841
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-066
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-231
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-1253
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-1233
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-2463 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00 |
| filingDate |
2018-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b84f1d79f7e4fbd750232671a0880ba2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a98778a8da1a48147ab1d621c2294365
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4aa74980ce19a9dfd33fb4d546562adf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_91a1ec0cf2e4f48c853e54e6cf30f941 |
| publicationDate |
2021-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10937961-B2 |
| titleOfInvention |
Structure and method to form bi-layer composite phase-change-memory cell |
| abstract |
A Phase-change-memory (PCM) cell and method of forming the PCM are provided. In an illustrative embodiment, a method of forming a PCM cell includes forming a first layer of a first germanium-antimony-tellurium (GST) type material over at least a portion of the bottom and sides of a pore through a dielectric layer of low dielectric material to a bottom electrode. The method also includes forming a second layer of a second GST type material over the first GST type material along the bottom and sides of the pore over the bottom electrode. The first GST type material is different from the second GST type material. |
| priorityDate |
2018-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |