http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20060008027-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8828 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-826 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 |
| filingDate | 2004-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_396c7c6033ca93d6feaa5278568531f2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_94b28c271c65cb6787d5df79113b452f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e512eebb3bc59a659754dd4df56f7c31 |
| publicationDate | 2006-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20060008027-A |
| titleOfInvention | Formation method of phase change memory device |
| abstract | The present invention relates to a method of forming a phase conversion memory device, comprising: providing a semiconductor substrate having a first wiring and a lower electrode connected to the first wiring, and exposing the lower electrode on a substrate; Forming a first insulating film having a first contact, forming a cylindrical phase change material film pattern filling the first contact, and covering the phase change material film pattern on the resultant first insulating film. Forming an upper electrode, forming a second insulating film having a second contact exposing the upper electrode on the front surface of the substrate including the upper electrode, and forming an upper electrode contact plug to fill the second contact; Forming a second wiring on the resultant second insulating layer so as to be connected to the upper electrode contact plug, and forming a bit line on the substrate including the second wiring. Forming a third insulating film having a third contact exposing the site, forming a contact plug to bury the third contact, and forming a third wiring to be connected to the contact plug on the resultant third insulating film Steps.n n n Accordingly, the present invention can be expected to increase the thickness of the phase change material film pattern by forming a three-dimensional stack structure of the PRAM cell, thereby reducing the cell size and increasing the contact resistance due to the increase in the thickness of the phase change material film itself. In addition, a highly integrated phase change memory device can be manufactured. In addition, the present invention has the advantage that the step coverage characteristics are superior to the conventional physical vapor deposition by forming a phase conversion material film using a chemical vapor deposition method. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8049201-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100831159-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7807497-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8525244-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7867880-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7727884-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101270435-B1 |
| priorityDate | 2004-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419524915 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5352426 |
Total number of triples: 24.