http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20050031160-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-881 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-231 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-30 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 |
| filingDate | 2003-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0afab63476957ec7dc87085da32221d8 |
| publicationDate | 2005-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20050031160-A |
| titleOfInvention | Phase-changable memory device and method of forming the same |
| abstract | A phase conversion memory element and its formation method are disclosed. The phase change memory device includes a phase change element positioned on the lower electrode contact; A metal oxide layer on the phase change element and aligned with the phase change element; A conductive metal oxide layer disposed on the phase change element and having a sidewall contacting the metal oxide layer; and an upper electrode contact electrically connected to the phase change element. In order to form this element, a lower electrode contact is formed on the semiconductor substrate through the lower interlayer insulating film and electrically connected to the semiconductor substrate. A phase conversion element overlapping the lower electrode contact and covering a portion of the lower interlayer insulating layer and a metal oxide layer aligned with the phase conversion element are formed on the phase conversion element. An upper interlayer insulating film is laminated. The upper interlayer insulating layer is patterned to form an upper electrode contact hole exposing the metal oxide layer. A heat treatment process is performed on the semiconductor substrate on which the upper electrode contact hole is formed to deform the metal oxide film exposed by the upper electrode contact hole into a conductive metal oxide film. An upper electrode contact is formed to fill the upper electrode contact hole. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100842903-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7851776-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100796732-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7666789-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100818498-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8148710-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8551805-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7803657-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7332370-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100721017-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8026125-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100668846-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7807497-B2 |
| priorityDate | 2003-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 37.