| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_424db9d56b06a23aed410fcf5df652f3 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B65G47-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23P19-02 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23P19-002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0382
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23P19-006 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F12-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-038
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07C317-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate |
2004-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2006-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2d52857b7f03c9e234813a25fd9306fb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0fae1569bdd2e7a3c69ec6e378a4d433
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b735a8d83c8e9031effc2d561125bdc8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5c5bd0a1d03685933a67bd0666edf50d |
| publicationDate |
2006-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7109311-B2 |
| titleOfInvention |
Sulfonyldiazomethanes, photoacid generators, resist compositions, and patterning process |
| abstract |
A chemical amplification type resist composition comprising a specific benzenesulfonyldiazomethane containing a long-chain alkoxyl group at the 2-position on benzene ring has many advantages including improved resolution, improved focus latitude, minimized line width variation or shape degradation even on long-term PED, minimized debris left after coating, development and peeling, and improved pattern profile after development and is thus suited for microfabrication. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8110335-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010233635-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8173348-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8202677-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010009286-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010009271-A1 |
| priorityDate |
2003-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |