http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001055373-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_424db9d56b06a23aed410fcf5df652f3 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07C317-28 |
| filingDate | 1999-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b81b1c5a5d52d3acb14f3fa5d54f296c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5c5bd0a1d03685933a67bd0666edf50d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c8e054927dda4762faf969d5e11a8f87 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_234f320334f9a97fe9e39a3fe7148a86 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5799d705f84b202f3d52a11379191e3a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_591d782423c75fb6247fc36b492019df |
| publicationDate | 2001-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2001055373-A |
| titleOfInvention | New sulfonyldiazomethane compounds and photoacid generators for resist materials |
| abstract | (57) [Solution] A sulfonyldiazomethane compound represented by the following general formula (1). Embedded image (R 1 is .G .R 2 represents an alkyl group or an aryl group having 6 to 14 carbon atoms, from 1 to 10 carbon atoms represents an alkyl group having 1 to 6 carbon atoms represents a SO 2 or CO, R 3 Represents an alkyl group having 1 to 10 carbon atoms or an aryl group having 6 to 14 carbon atoms, p is an integer of 0 to 4, q is an integer of 1 to 5, 1 ≦ p + q ≦ 5, and n is n 1 or 2, m is 0 or 1. Also, n + m = 2. The sulfonyldiazomethane represented by the general formula (1) or (1a) of the present invention can be suitably used as a photoacid generator for a chemically amplified resist material and contains a sulfonic ester group in the molecule. By doing so, the resolution, the focus margin is excellent, the line width fluctuation and the shape deterioration are small even when the PED is over a long time, and further after coating, after development, It has little foreign matter after peeling, has excellent pattern profile shape after development, has high resolution suitable for fine processing, and exhibits great power especially in deep ultraviolet lithography. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20010095756-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7101651-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101965908-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20130010857-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6916591-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6689530-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6713612-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7109311-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7282316-B2 |
| priorityDate | 1999-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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