| abstract |
A process chamber 110 capable of processing a substrate 30 in a plasma of process gas. The chamber 110 comprises a support 200 having a dielectric 210 covering an electrode 220 and a conductor 230 below the electrode 220 . A voltage supply 180 supplies a gas energizing voltage to the conductor 220 , and the conductor is adapted to capacitively couple the voltage to the electrode 220 to energize the process gas. Alternatively, the voltage may be supplied to the electrode 220 through a connector 195 which can capacitively couple with the conductor 230 . A DC power supply 190 may also provide an electrostatic chucking voltage to the electrode 220 . In one version, the conductor 230 comprises an interposer 280. |