http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015206722-A1

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publicationDate 2015-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2015206722-A1
titleOfInvention Lower electrode and plasma processing apparatus
abstract A lower electrode 2 includes a conductive base member 2 a to which a high frequency power is applied; an electrostatic chuck 6 , having an insulating layer 6 b formed on a top surface of the base member 2 a to cover an electrode 6 a , configured to electrostatically attract a semiconductor wafer W as a target of a plasma process onto the insulating layer 6 b ; a focus ring 5 provided on a top surface of the insulating layer 6 b of the electrostatic chuck 6 to surround the semiconductor wafer W; and a thermally sprayed film 100 , which is conductive and formed on a portion of the insulating layer 6 b of the electrostatic chuck 6 positioned between the focus ring 5 and the base member 2 a by using a composite material in which titania is added to an insulating material for the insulating layer at a preset weight ratio.
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