| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8205ec6ee1cd95eb60a03826535bad97
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7fbcdb105756f552ddf2e9ae2cfcf40a |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-038
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-094
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30621
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D161-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G12-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G65-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G65-4012 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G12-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G65-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-40 |
| filingDate |
2017-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2022-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f6aabf6a2541e1c1480dbf38b31a693a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_03993ef0e89b0e209338943b29006c40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fd62a6fb2c42d9c8421dd3db7d2c32fd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0716b98113bd50809dd67e169852c117 |
| publicationDate |
2022-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11339242-B2 |
| titleOfInvention |
Method for manufacturing semiconductor substrate having group-III nitride compound layer |
| abstract |
A method for manufacturing a semiconductor substrate having a patterned group-III nitride compound layer without collapsing a formed mask pattern due to reflow or decomposition even when an etching method at a high temperature of 300° C.-700° C. is used, including the steps: forming a patterned mask layer on the substrate's group-III nitride compound layer, and etching the group-III nitride compound layer by dry etching at 300° C. or higher and 700° C. or lower using the mask pattern, to form patterned group-III nitride compound layer, wherein the patterned mask layer contains a polymer containing a unit structure of the following Formula (1):a polymer containing a unit structure of the following Formula (2):O—Ar1 Formula (2)a polymer containing a structural unit of the following Formula (3):O—Ar2—O—Ar3-T-Ar4 Formula (3)a polymer containing a combination of unit structure of Formula (2) and unit structure of Formula (3), or a crosslinked structure of the polymers. |
| priorityDate |
2016-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |