| abstract |
A method for producing a semiconductor device, which includes forming an underlayer film on a semiconductor substrate with a resist underlayer film forming composition that contains a solvent, and a polymer containing a unit structure of Formula (2):n n O—Ar 2 —O—Ar 3 -T-Ar 4 Formula (2)n nwhere Ar 2 , Ar 3 , and Ar 4 are individually a C 6-50 arylene group or an organic group containing a heterocyclic group; at least one of Ar 3 and Ar 4 is a phenylene group; and T is a carbonyl group. The resist underlayer film forming composition has a solid content of 0.1 to 70 mass % of a total mass of the composition. |