Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02356 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02252 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76801 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76805 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31053 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7806 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6835 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76846 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-562 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76828 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76816 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3171 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3192 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76837 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-683 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
filingDate |
2019-02-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2021-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b51c7f5b28e09dfc486383aab7f2e893 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_94d2a2a37e92d36e78359ff3753066e9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa5908a2beb84d9bd744491039fd1614 |
publicationDate |
2021-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-11201122-B2 |
titleOfInvention |
Method of fabricating semiconductor device with reduced warpage and better trench filling performance |
abstract |
A trench is formed through a plurality of layers that are disposed over a first substrate. A first deposition process is performed to at least partially fill the trench with a first dielectric layer. The first dielectric layer delivers a tensile stress. A second deposition process is performed to form a second dielectric layer over the first dielectric layer. A third deposition process is performed to form a third dielectric layer over the second dielectric layer. The third dielectric layer delivers a first compressive stress. |
priorityDate |
2018-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |