| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61M2025-1093
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61M2025-1079
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61M25-0108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61M2205-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61F2002-9583
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61M25-0127
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61M25-0069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61F2250-0098
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61M25-0054
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61M25-005 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61M25-0068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61M25-1027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61M25-008
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76235
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61M25-001
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61F2-958 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/A61F2-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/A61F2-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/A61M25-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/A61M25-10 |
| filingDate |
2004-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2007-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4bfd1b16264e9b621c0b4e25f93a82f6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bd8aff287d8ed5e3e31f9dddf0ba7b12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_27d5e02520f3050ff3402fd7bc1a17f6 |
| publicationDate |
2007-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I278960-B |
| titleOfInvention |
Method for achieving improved STI gap fill with reduced stress |
| abstract |
A shallow trench isolation (STI) structure and method of forming the same with reduced stress to improve charge mobility the method including providing a semiconductor substrate comprising at least one patterned hardmask layer overlying the semiconductor substrate; dry etching a trench in the semiconductor substrate according to the at least one patterned hardmask layer; forming one or more liner layers to line the trench selected from the group consisting of silicon dioxide, silicon nitride, and silicon oxynitride; forming one or more layers of trench filling material comprising silicon dioxide to fill the trench; carrying out at least one thermal annealing step to relax accumulated stress in the trench filling material; carrying out at least one of a CMP and dry etch process to remove excess trench filling material above the trench level; and, removing the at least one patterned hardmask layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11201122-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I703673-B |
| priorityDate |
2004-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |