| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88fc7f9eb617072238851d46591a0c76 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
| filingDate |
2005-08-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2007-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2cdeb5405b82f930df46f1cef4fc4606
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d9b70c2b1c06dc7c59409204adb2b081
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2aa7a4b78894bca30165104fad7c0fdb |
| publicationDate |
2007-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7229896-B2 |
| titleOfInvention |
STI process for eliminating silicon nitride liner induced defects |
| abstract |
The present invention discloses an improved shallow trench isolation process. A semiconductor substrate having a pad oxide disposed thereon and a pad nitride disposed directly on the pad oxide is provided. A trench is etched, through the pad oxide and the pad nitride, into the semiconductor substrate. A thermal oxide liner is then grown in the trench. A silicon nitride liner is deposited into the trench, wherein the silicon nitride liner covering the pad nitride and the thermal oxide liner has a first stress status. A stress alteration process is performed to alter the silicon nitride liner from the first stress status to a second stress status. A trench fill dielectric having the second stress status is deposited into the trench. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8003482-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009155980-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014264719-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9006080-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011117719-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11581438-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11201122-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8889523-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015140819-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007141852-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007205489-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8501632-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010203700-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8673780-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7988875-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7846812-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8936995-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10008531-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9653543-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10636798-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008190886-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I703673-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8956976-B2 |
| priorityDate |
2005-08-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |