| abstract |
The present invention relates to a laser beam mask for sequential lateral solidification (SLS) laser crystallization and to crystallization using the same, and includes a transmission region through which a laser beam passes and a blocking region to block the laser beam. The transmissive areas may be arranged in a plurality in a constant manner, each of which includes a central portion of a rectangle; Each short axis of the central portion extends away from each other, and the tape comprises both edge portions of tapered shape gradually narrower, and amorphous silicon primary crystallization on the substrate using the same, and in the transverse direction to less than the long axis length of the mask pattern Provided is a silicon crystallization method which is moved and then secondary crystallized to form large grains. |