| abstract |
(57) [Abstract] [Purpose] A plasma treatment method using a helicon wave plasma source is used to suppress excessive dissociation in the process gas and increase the selectivity to silicon. In a method in which a source power is supplied from a high-frequency power source 17 to a source chamber 11 via an antenna of a helicon wave plasma source, and a substrate 14 is processed by plasma generated by a discharge action, electron density or The plasma processing is performed with a source power having a low value equal to or lower than the source power value corresponding to the discontinuous portion in the source power dependence characteristic of the saturated ion current density. |