http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100323613-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67017 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32183 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3211 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate | 2000-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2002-02-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2002-02-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100323613-B1 |
| titleOfInvention | Apparatus for generating a large area plasma source |
| abstract | According to the present invention, a plurality of quartz cylinders 32 are disposed on the process chamber 30 and a plurality of antennas 34 are disposed around the process chambers, and the process chambers are controlled by the high frequency power source 36 and the matching circuit 38. 30. A method of forming a plasma in a 30, wherein: a signal from the high frequency power source 34 is connected and transmitted in the middle of an antenna 34, and a capacitance connected in parallel by a time varying current flowing through the antenna 34; Inductance is induced, and their resonance enables efficient energy transfer, so that unit plasma sources are arranged in an array to form an inductively coupled plasma.n n n Accordingly, there is an effect of uniformly forming a large area of non-equilibrium low-temperature plasma required for depositing a thin film on a large-area silicon wafer or a glass substrate for flat panel display or etching for pattern formation. |
| priorityDate | 2000-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.