| abstract |
PROBLEM TO BE SOLVED: To form a high-quality thin film by forming a layer in which a residue is prevented from remaining every cycle. A processing chamber having a first processing region, a second processing region, and a third processing region, processing a substrate in the first processing region, the second processing region, and the third processing region, and a substrate, A rotation mechanism that rotates a substrate mounting table to be mounted, and a process of supplying a source gas into the first processing region, a reactive gas into the second processing region, and a reformed gas into the third processing region A gas supply system; a reactive gas plasma generator that generates plasma of a reactive gas in the second processing region; a reformed gas plasma generator that generates plasma of the reformed gas in the third processing region; a rotation mechanism; A technique is provided that includes a processing gas supply system, a control gas plasma generation unit, and a control unit configured to control the reformed gas plasma generation unit. [Selection] Figure 3 |