| abstract |
[PROBLEMS] To provide a resist pattern forming method that can improve resist performance and can be applied to an existing coating apparatus without reducing productivity, and can form a resist film with a large film thickness. The present invention provides a resist pattern forming method comprising a step of forming a resist film with a photoresist composition, a step of exposing the resist film, and a step of developing the exposed resist film. The resist composition contains a polymer having a weight average molecular weight of 1,000 or more and 7,500 or less and a structural unit containing an acid dissociable group that is dissociated by the action of an acid, a radiation-sensitive acid generator, and a solvent. The solid content of the photoresist composition is 20% by mass or more and 60% by mass or less. The viscosity at 25 ° C. of the photoresist composition is preferably from 50 mPa · s to 150 mPa · s. [Selection figure] None |